Aratas launches 3,300 V SiC MOSFET relay

Aratas America LLC has launched the G3VH, a high-voltage relay available in 1,800 V and 3,300 V models for equipment that must switch demanding electrical loads without taking up much space.

The component uses SiC MOSFETs — silicon-carbide metal-oxide-semiconductor field-effect transistors — rather than conventional silicon-based power semiconductors. Aratas says SiC offers significantly higher dielectric breakdown strength, the ability to resist electrical failure at high voltage, while the G3VH combines that property with low ON resistance, low leakage current and high-speed switching.

The relay provides 5,000 Vrms dielectric strength between its input and output. It comes in PCB-terminal and surface-mount DIP 6-pin packages, giving equipment manufacturers two compact integration options. Aratas says the design can reduce power loss and heat generation while supporting smaller high-voltage systems.

The relay is intended for semiconductor test equipment, battery management systems and measuring instruments. In those settings, the G3VH is intended to support more accurate measurements, greater stability and faster inspection throughput; the company also lists improved defect detection and conformance-testing accuracy among the benefits.

So what changes in practice? Equipment makers get a newly launched switching component rated up to 3,300 V, with a form factor designed for miniaturized systems and electrical characteristics aimed at reducing losses. The published performance figures are Aratas’ own, and the announcement gives no independent test results, price or customer deployment details.