LaboratórioComputaçãoTexto original em inglês
In lab, ultrathin magnesium cuts p-GaN contact resistance
Nagoya University treated p-type gallium nitride with magnesium at 600°C for five minutes.
Redigido por IA1 fonte2 min
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Nagoya University treated p-type gallium nitride with magnesium at 600°C for five minutes.
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